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Automotive IGBT Modul High Power Converters FF1500R12IE5 Active Dual 1500.0 A IGBT5 - E5

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Automotive IGBT Modul High Power Converters FF1500R12IE5 Active Dual 1500.0 A IGBT5 - E5

Name: Automotive IGBT Modul High Power Converters FF1500R12IE5 Active Dual 15000 A IGBT5 E5
Brand: Infineon
Price: 1 USD

Brand Name : Infineon

Model Number : FF1500R12IE5

Place of Origin : China

MOQ : 1 set

Payment Terms : T/T

Supply Ability : 1000sets

Delivery Time : 25 days after signing the contract

Packaging Details : Wooden box packing

VCES : 1200V

IC nom : 1500A

ICRM : 3000A

Applications : Motor drives

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PrimePACK™3+modulewithTrench/FieldstopIGBT5,EmitterControlled5diodeandNTC VCES = 12

Potential Applications
• UPS systems
• High power converters
• Solar applications
• Motor drives

Electrical Features
• Tvj op = 175°C
• Extended operating temperature Tvj op
• Unbeatable robustness
• Trench IGBT 5
• High short-circuit capability

Mechanical Features
• Package with CTI>400
• High power density
• High power and thermal cycling capability
• High creepage and clearance distances

IGBT Inverter
Maximum Rated Values

Collector-emitter voltage	Tvj = 25°C	VCES	1200	V
Continuous DC collector current	TC = 100°C, Tvj max = 175°C	IC nom	1500	A
Repetitive peak collector current	tP = 1 ms	ICRM	3000	A
Gate-emitter peak voltage	VGES	+/-20	V

Characteristic Values min. typ. max.

Collector-emitter saturation voltage	IC = 1500 A, VGE = 15 V IC = 1500 A, VGE = 15 V IC = 1500 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 175°C	VCE sat	1,70 2,00 2,15	2,15 2,45 2,60	VVV
Gate threshold voltage	IC = 41,0 mA, VCE = VGE, Tvj = 25°C	VGEth	5,25	5,80	6,35	V
Gate charge	VGE = -15 V ... +15 V, VCE = 600V	QG	7,15	µC
Internal gate resistor	Tvj = 25°C	RGint	0,6	Ω
Input capacitance	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V	Cies	82,0	nF
Reverse transfer capacitance	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V	Cres	3,25	nF
Collector-emitter cut-off current	VCE = 1200 V, VGE = 0 V, Tvj = 25°C	ICES	5,0	mA
Gate-emitter leakage current	VCE = 0 V, VGE = 20 V, Tvj = 25°C	IGES	400	nA
Turn-on delay time, inductive load	IC = 1500 A, VCE = 600 V VGE = ±15 V RGon = 0,82 Ω Tvj = 25°C Tvj = 125°C Tvj = 175°C	td on	0,26 0,28 0,28	µs µs µs
Rise time, inductive load	IC = 1500 A, VCE = 600 V VGE = ±15 V RGon = 0,82 Ω Tvj = 25°C Tvj = 125°C Tvj = 175°C	tr	0,16 0,17 0,18	µs µs µs
Turn-off delay time, inductive load	IC = 1500 A, VCE = 600 V VGE = ±15 V RGoff = 0,82 Ω Tvj = 25°C Tvj = 125°C Tvj = 175°C	td off	0,51 0,56 0,59	µs µs µs
Fall time, inductive load	IC = 1500 A, VCE = 600 V VGE = ±15 V RGoff = 0,82 Ω Tvj = 25°C Tvj = 125°C Tvj = 175°C	tf	0,09 0,11 0,13	µs µs µs
Turn-on energy loss per pulse	IC = 1500 A, VCE = 600 V, LS = 30 nH VGE = ±15 V, di/dt = 7900 A/µs (Tvj = 175°C) RGon = 0,82 Ω Tvj = 25°C Tvj = 125°C Tvj = 175°C	Eon	120 180 215	mJ mJ mJ
Turn-off energy loss per pulse	IC = 1500 A, VCE = 600 V, LS = 30 nH VGE = ±15 V, du/dt = 2750 V/µs (Tvj = 175°C) RGoff = 0,82 Ω Tvj = 25°C Tvj = 125°C Tvj = 175°C	Eoff	155 195 220	mJ mJ mJ
SC data	VGE ≤ 15 V, VCC = 900 V VCEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 175°C	ISC	5600	A
Thermal resistance, junction to case	Each IGBT / per IGBT	RthJC	19,5	K/kW
Thermal resistance, case to heatsink	each IGBT / per IGBT λPaste = 1 W/(m·K)/λgrease =1 W/(m·K)	RthCH	12,5	K/kW
Temperature under switching conditions	Tvj op	-40	175	°C

Automotive IGBT Modul High Power Converters FF1500R12IE5 Active Dual 1500.0 A IGBT5 - E5

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high power igbt module

eupec igbt module

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