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FP50R12KT4_B11 Infineon Full Bridge Igbt Module AG | Emitter Controlled 4 Diode

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FP50R12KT4_B11 Infineon Full Bridge Igbt Module AG | Emitter Controlled 4 Diode

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Brand Name : Infineon

Model Number : FF1500R12IE5

Place of Origin : China

MOQ : 1 set

Payment Terms : T/T

Supply Ability : 1000sets

Delivery Time : 25 days after signing the contract

Packaging Details : Wooden box packing

VCES : 1200V

IC nom : 1500A

ICRM : 3000A

Mechanical Features : Copper BasePlate

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IGBT power modules FP50R12KT4_B11 Infineon Technologies AG | Emitter Controlled 4 diode

Typical Applications
• Auxiliary Inverters
• Motor Drives
• Servo Drives


Electrical Features
• Low SwitchingLosses
• Tvj op = 150°C
• VCEsat withpositiveTemperature Coefficient
• Low VCEsat


Mechanical Features
• High Power and ThermalCycling Capability
• HighPower Density
• Integrated NTC temperaturesensor
• Copper BasePlate
• PressFIT Contact Technology
• Standard Housing


Product Tags:

high power igbt module

      

eupec igbt module

      
Quality FP50R12KT4_B11 Infineon Full Bridge Igbt Module AG | Emitter Controlled 4 Diode for sale

FP50R12KT4_B11 Infineon Full Bridge Igbt Module AG | Emitter Controlled 4 Diode Images

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